| 1. | Insulated gate bipolar transistor modules arm and pair of arms
绝缘栅双极型晶体管模块.臂和臂对 |
| 2. | High power solid modulator with insulated gate bipolar transistor
绝缘栅控双极晶体管大功率固态调制器 |
| 3. | Insulated gate bipolar transistor
绝缘的双级晶体管 |
| 4. | This paper investigates the insulate gate bipolar transistor ( igbt ) used as the main switch in pulsed power supply . firstly , the igbt " s characteristics , principle and applications are introduced
本文在分析了中大功率igbt特性、工作原理及应用背景的基础上，将其作为材料表面防护处理的特种脉冲电源主功率开关器件。 |
| 5. | This paper has designed a inverter power supply of volume 2kva , working frequency 20khz . , based on that has analyzed the characteristic of igbt ( insulated gate bipolar transistor ) . it was provided the working theory of dc voltage circuit and bridge type invert circuit
本文在分析了igbt (绝缘栅双极晶体管)特性的基础上，设计了一台容量为2kva 、频率为20khz的高频逆变电源。 |
| 6. | In this paper , a phase shifting pulse width modulated ( pwm ) soft switching high voltage invert power supply has been developed with the use of the principle of advanced invert technique and the new type of power semi - conductor device - insulated gate bipolar transistor ( igbt )
本文采用最新的逆变思想与新型的开关器件?绝缘栅型双极晶体管( igbt ) ，研制出了移相式pwm软开关高压逆变电源。逆变技术发展至今，已经逐渐向大功率方向发展。 |
| 7. | According to the following design theory : the dsp calculates in real time and produces three phases spwm waves to control the on or off of the 6 igbts in ipm respectively . ipm then inverts the commutated single phase direct current ( insulated gate bipolar transistor ) into three phases alternating current . when modulated signals of spwm are changed , the on - off time of switches also changes , so as to the voltage and frequency of output signals
本文提出了一种基于dsp (数字信号处理器tms320f240 )的通用的三相间接变频电源系统，利用分段同步调制法和混合查表法，实时计算不同频率下的采样周期、电压幅值、输出脉宽，产生双极性spwm波形，经驱动放大后用于ipm ( intelligentpowermodule )中的绝缘栅双极型晶体管栅级驱动，以控制电源的输出电压和频率，实现变频电源的智能数字控制。 |
| 8. | High frequency switching technique is becoming more popular in the power electronics area , the high frequency power transistors are applied in the buck - boost type chopper system . the characteristics of power mosfet and insulated gate bipolar transistors ( igbt ) , some new kinds of power swithing devices , are deeply studied
高频开关技术是当今电力电子技术发展的方向，本文研究的buck - boost斩波系统中采用了高频功率器件，所以本文对新型开关器件? ?功率mos场效应管[ mosfet ]和绝缘门极晶体管[ igbt ]的特性进行了初步研究。 |
| 9. | Abstract : this paper puts forward a designing method , on the basis of experimental results , for a high - efficient powerful switching power supply employing igbt ( insulated gate bipolar transistors ) . the paper analyzes the main factors affecting the efficiency of the main loop and the measures to increase efficiency which can reach 90 % according to the experiment
文摘:在实验研究的基础上，提出一种采用igbt器件的高效大功率开关电源的设计方法，着重分析了系统主回路中影响效率的各主要因素以及应采取的对策，实验证明可使效率达90 %以上。 |
| 10. | This paper puts forward a designing method , on the basis of experimental results , for a high - efficient powerful switching power supply employing igbt ( insulated gate bipolar transistors ) . the paper analyzes the main factors affecting the efficiency of the main loop and the measures to increase efficiency which can reach 90 % according to the experiment
在实验研究的基础上，提出一种采用igbt器件的高效大功率开关电源的设计方法，着重分析了系统主回路中影响效率的各主要因素以及应采取的对策，实验证明可使效率达90 %以上。 |
